Photo Transistor
PRODUCT INTRODUCTION
Our wide variety of photo transistors must satisfy your needs. For example, Silicon Photo transistor: PTC080M3B is recommended for applications require high-sensitivity large-output. High reliability due to the passivation technology. Excellent in photo detection over a wide range from visible light to near infrared rays. Only Ø3mm compact body dedicated to minimalize your products.
SPECIFICATIONS
| Parameter | Symbol | Value | Unit | Condition (Ta=25°) | |
|---|---|---|---|---|---|
| Collector Emitter Current | Icel | Typ. | 1.0 | mA | Vce=10V, Ee=0.5mw/cm2※ |
| Collector Dark Current | Iceo | Max. | 100 | nA | Vce=10V, Ee=0mw/cm2※ |
| C-E Saturation Voltage | VCE(Sat) | Typ. | 0.2 | V | Ic=0.2mA, Ee=5mw/cm2※ |
| Peak Sensitivity Wave Length | λp | Typ. | 880 | nm | |
| Active Area | A | 0.36 | ｍｍ2 | ||
※Color Temperature=2870°K standard Tungsten Lump